Polishing

Surface quality

Improve yields and device performance
(from as-cut or on commercial wafers for wafer manufacturers or users)

SiC AIN GaN Al2O3 ZnO Ge, CdTe, SiGe silice …
Polishing

Surface quality

SiC 4H(n-type and SI)
on-axis − 8° off
6H(n-type and SI)
on-axis − 8° off
4H - 6H
a- & m-plane
3C
Face Si C Si C N/A
RMS**(Å) <1* <1* <1* <1* <1* <5

Other materials AI2O3
c- & r-plane
ZnO AIN GaN
Face N/A Zn O AI N Ga N
RMS**(Å) <1 - 2* <1* <1* <3 - 1 - 2 1

* with atomic steps
** measured by AFM, field size 5µm x 5µm in tapping mode