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Polishing and Reclaim

NOVASiC has developed innovative polishing processes for the different crystal types (6H, 4H, doped and semi-insulating, 3C, ...).

StepSiC® is our trade mark for the polishing of the Si-face.

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State of the Art specifications to enhance epitaxy and device yields or performance: scratch free, low roughness, ultra-clean epiready surface, no damaged layers.

Services

Surface Quality

Thinning

Reclaim

Planarization

Publications

  • CVD of 6H-SiC on Non-Basal Quasi Polar Faces

Y. Shishkin, S. P. Rao, O. Kordina, I. Agafonov, A. Maltsev, J. Hassan, A. Henry, C. Moisson and S.E. Saddow
Materials Science Forum Vols. 556-557 (2007) pp 73-76

  • A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation During High Field Etching of SiC

Y. Ke, C. Moisson, S. Gaan, R.M. Feenstra, R.P. Devaty and W.J. Choyke
Materials Science Forum Vols. 527-529 (2006) pp743-746

  • Processing of poly-SiC Substrates with Large Grains for Wafer-Bonding

G. Chichignoud, L. Auvray, E. Blanquet, M. Anikin, E. Pernot, J-M. Bluet, P. Chaudouët, M. Mermoux, C. Moisson, F. Letertre, M. Pons, R. Madar
Materials Science Forum Vols. 527-529 (2006) pp 71-74

  • Growth of GaN quantum dots on nonpolar A -plane SiC by molecular-beam epitaxy

S. Founta, F. Rol, , E. Bellet-Amalric, E. Sarigiannidou, B. Gayral, C. Moisson, H. Mariette and B. Daudin
Physica Status Solidi (b), Volume 243, Issue 15 , Pages3968 - 3971

  • Regrowth of 3C-SiC on CMP treated 3C-SiC/Si Epitaxial Layers

H. Mank, C. Moisson, D. Turover, Mark Twigg and Stephen E. Saddow
Materials Science Forum Vols. 483-485 (2005) pp. 197-2005

  • GaN quantum dots grown on non-polar a-plane SiC by plasma-assisted molecular beam epitaxy

S. Founta, F. Rol, T. Andreev, B. Gayral, E. Bellet-Amalric, C. Moisson, H. Mariette and B. Daudin
Phys .stat. sol.(c) 2, 2341 (2005)

  • LPMOCVD growth of GaN on silicon carbide

M-A. Di Forte-Poisson, A. Romann, M. Tordjman, M. Magis, J. Di Persio, C. Jacques, P.Vicente
Journal of Crystal Growth 248 (2003) 533-536

  • Direct growth of high quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC substates

P. Vicente, E.Pernot, D. Chaussende and J. Camassel
Materials Science Forum Vols. 389-393(2002) pp729-732

  • Optical Characterization of SiC Materials: Bulk and Implanted Layers

J. Camassel, P. Vicente and L.A. Falkovski

  • Raman scattering as a probing method of subsurface damage in SiC

P. Vicente, D. David and J. Camassel
Materials Science and Engineering B, Volume 80, Issues 1-3, 22 March 2001, pp348-351

  • Atomic-Step Observations 6H-and 15R-SiC Polished Surfaces

P. Vicente, E.Pernot, D. Chaussende and J. Camassel
Materials Science Forum Vols. 389-393(2002) pp729-732

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