NOVASiC has developed innovative polishing processes for the different crystal types (6H, 4H, doped and semi-insulating, 3C, ...).

StepSiC® is our trade mark for the polishing of the Si-face.

State of the Art specifications to enhance epitaxy and device yields or performance: scratch free, low roughness, ultra-clean “epiready” surface, no damaged layers.

• No sub-surface damage after StepSiC® polishing of 4H and 6H-SiC wafers

• No sub-surface damage after polishing on 3C-SiC/Si